Silicon Bipolar High fT Low Noise Microwave Transistors
Description
Silicon Bipolar High fT Low Noise Microwave Transistors
Features
•fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard
MP4T645
Case Styles
Description
The MP4T645 family of high gain-bandwidth, small signal silicon bipolar transistors is well suited for use in amplifiers to approximately 4 GHz, and in oscillators to approximately 10 GHz.
These industry standard transistors freature low noise figure at high collector current, which produces v ery good associated gain and wide dynamic range.
The MP4T645 series transistors are av ailable in a hermetic microstrip package (MP4T64535), in the plastic SOT-23 package (MP4T64533), in chip form (MP4T64500), and in the SOT-143 package (MP4T64539).
The MP4T645 series is av ailable in other plastic and hermetic packages as well.
The chip and hermetically packaged transistors can be screened to a JANTXV equiv alent lev el.
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SOT-23
SOT-143
Chip
Applications
The MP4T645 family of bipolar NPN transistors can be used for low noise, high associated gain.
large dynamic range amplifiers up to approximately 4 GHz.
These transistors can also be used as preamplifier or driv er stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also be used for oscillators or VCOs up to approximately 10 GHz.
The passiv ation consists of silicon dioxide, commonly known as thermal oxide, and silicon nitride to produce v ery low 1/f noise in both amplifiers and oscillators.
Micro-X
Specification Subject to Change Without Notice
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Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings MP4T645 Series
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