Low Noise High fT Silicon Transistor
Description
3 Volt, Low Noise High fT Silicon Transistor
Features
• • • • • High Performance at VCE = 3V Low Noise Figure at Small Currents (0.
3-2 mA) High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel
MP4T6310 Series
SOT-23
Description
The MP4T6310 series of low current, high fT silicon NPN bipolar transistors provides low noise figure at a bias of 3 volts and small collector current.
These inexpensive surface mount NPN transistors are well suited for usage in protable battery operated wireless systems from 500 MHz through 2.
5 GHz where low noise figure at small current is important.
The MP4T6310 transistors series has high fT and low noise when operated with 0.
3 to 2.
0 milliamperes current, and 3 volt bias.
The associated gain is approximately 14 dB at 1 GHz with 1 mA collector current.
The MP4T6310 also has low phase noise while operating in a low power 3-5 volt battery operated VCO in the frequency range of 0.
5 to 3 GHz.
The MP4T6310 transistor is designed for wireless communication systems from VHF through L-band where good noise figure and high gain at 3 volt bias and low DC current are key system requirements.
Suggested uses www.
DataSheet4U.
com include, 900 MHz portable phones, pagers, PCN subscriber phones and 2.
4 GHz cordless and cellular hand held receivers.
The MP4T6310 family of transistors is available in chip (MP4T631000), SOT-23 (MP4T631033), SOT-143 (MP4T631039), and in Micro-X (MP4T631035) packages.
Surface mount packages are available on tape and reel.
SOT-143
Chip
Specification Subject to Change Without Notice
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3 Volt, Low Noise High fT Silicon Transistor Electrical Specifications at 25°C
Symbol fT |S21E|
2
MP4T6310 Series
Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure
NF
GTU (max)
Unilateral Gain
MAG P...
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