N-Channel MOSFET
Description
FDA032N08 — N-Channel PowerTrench® MOSFET
FDA032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.
2 mΩ
May 2014
Features
• RDS(on) = 2.
5 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
G D S
TO-3PN
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDA032N08 75 ±20 235 165 120 940
1995 5.
5 375 2.
5 -55 to +175 300
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDA032N08 0.
4 40
Unit V V
A
A mJ V/ns W W/oC oC oC
Unit oC/W
©2009 Fairchild Semiconductor Corporation
1
FDA032N08 Rev.
C4
www.
fairchildsemi.
com
FDA032N08 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDA032N08
Top Mark FDA032N08
Package Packing Method
TO-3PN
Tube
Reel Size N/A
Tape Width N/A
Quantity 30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Of...
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