Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min.
) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
4
A
2.
5 W
100
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3797
·
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC3797
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB=0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
1.
0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.
5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.
1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product IC= 0.
5A; VCE= 10V; f= 1MHz
8
MHz
Switching Times
ton
Turn-on Time
1.
0 μs
ts
Storage Time
IC= 5A; IB1= -IB2= 1A; VCC= 200V
3.
0 μs
tf
Fall Time
1.
0 μs
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification.
The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed
for use in equipment which req...
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