Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM ...
Inchange Semiconductor
2SC3719 PDF File
Similar Datasheet