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2SD864
Power Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
2SD864 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat...
Inchange Semiconductor
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