Power Transistor
Description
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5703
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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