Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1104 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABS...
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2SD1604 PDF File
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