Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
2SD1127
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM R...
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