UHF Power LDMOS Transistor
Description
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BLF888
UHF power LDMOS transistor
Rev.
01 — 16 December 2008 Objective data sheet
1.
Product profile
1.
1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz.
The excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1.
Application information RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless otherwise specified.
Mode of operation 2-tone, class AB DVB-T (8k OFDM)
[1]
f (MHz) f1 = 860; f2 = 860.
1 858
PL(PEP) PL(AV) Gp (W) 500 (W) 250 110 (dB) 20 20
ηD (%) 45 30
IMD3
IMDshldr
(dBc) (dBc) −32 [1]
Measured [dBc] with delta marker at 4.
3 MHz from center frequency.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.
4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efficiency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.
4 A: N Average output power = 110 W N Power gain = 20 dB N Drain efficiency = 30 % N Shoulder distance = −32 dBc (4.
3 MHz from center frequency) I Integrated ESD protection I Advanced flange material for optimum thermal behavior and reliability
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NXP Semiconductors
BLF888
UHF power LDMOS transistor
I I I I I I I I
Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction...
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