Internally Matched Power FET
Description
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EIC1415A-4
ISSUED 08/21/2007
14.
40-15.
40GHz 4-Watt Internally Matched Power FET
Excelics
EIC1415A-4
GATE DRAIN
FEATURES
• • • • • • • • 14.
40– 15.
40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
0 dBm Output Power at 1dB Compression 5.
0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43 dBc IM3 at Po = 25.
0 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.
060 MIN.
.
060 MIN.
.
650±.
008 .
512
.
319
YYWW SN
.
094 .
382
.
022
.
045 .
004
.
070 ±.
008
.
129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.
40-15.
40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 14.
40-15.
40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 14.
40-15.
40GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 14.
40-15.
40GHz Drain Current at 1dB Compression f = 14.
40-15.
40GHz
Caution! ESD sensitive device.
MIN
35.
5 4.
5
TYP
36.
0 5.
0
MAX
UNITS
dBm dB
±0.
6 25 1100 -40 -43 2080 -2.
5 5.
5 2880 -4.
0 6.
0
o
dB %
1400
mA dBc mA V C/W
Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.
0 dBm S.
C.
L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.
40GHz
Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA
Note: 1.
Tested with 100 Ohm gate resistor.
2.
S.
C.
L.
= Single Carrier Level.
3.
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
SYMBOLS PARAMETERS ABSOLUTE 15V -5V 48mA -7.
2mA 35.
5dBm 175C -65C to +175C 25W CONTINUOUS 10V -4V 14.
4mA -2.
4mA @ 3dB Compression 175C -65C to +175C 25W
Vds Vgs Igf Igr Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of t...
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