Power LDMOS Transistor
Description
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BLF6G10S-45
Power LDMOS transistor
Rev.
02 — 10 February 2009 Product data sheet
1.
Product profile
1.
1 General description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 920 to 960
VDS (V) 28
PL(AV) (W) 1.
0
Gp (dB) 23
ηD (%) 8
ACPR (dBc) −48.
5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.
0 W N Gain = 23 dB N Efficiency = 8 % N ACPR = −48.
5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
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NXP Semiconductors
BLF6G10S-45
Power LDMOS transistor
1.
3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2.
Pinning information
Table 2.
Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3
Symbol
1
2 2 3
sym112
[1]
Connected to flange
3.
Ordering information
Table 3.
Ordering information Package Name BLF6G10S-45 Description ceramic earless flanged package; 2 leads Version SOT608B Type number
4.
Limiting values
Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current ...
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