Silicon NPN Triple Diffused Planar Transistor
Description
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2SC3835
Application : Humidifier, DC-DC Converter, and General Purpose
(Ta=25°C) 2SC3835 100max 100max 120min 70 to 220 0.
5max 1.
2max 30typ 110typ V MHz pF
20.
0min 4.
0max
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3835 200 120 8 7(Pulse14) 3 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.
3A IC=3A, IB=0.
3A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1
Unit
µA µA
19.
9±0.
3
V
4.
0
a b
ø3.
2±0.
1
V
2 3 1.
05 +0.
2 -0.
1 0.
65 +0.
2 -0.
1 1.
4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 50 RL (Ω) 16.
7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
3 IB2 (A) –0.
6 ton (µs) 0.
5max tstg (µs) 3.
0max tf (µs) 0.
5max
5.
45±0.
1 B C E
5.
45±0.
1
Weight : Approx 6.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 7
200 mA
V CE ( sat ) – I B Characteristics (Typical)
2.
6
I C – V BE Temperature Characteristics (Typical)
7 (V C E =4V)
150
mA mA
6
100
6 Collector Current I C (A) 2
Collector Current I C (A)
5
60mA
40m A
5
4
4
p) Tem
mp) (Cas e Te
(Ca
1
se
3
20 mA
3
˚C
1
1 0 0.
005 0.
01
0
0
1
2
3
4
0.
05
0.
1
0.
5
1
0
0
–30˚C
I B =10mA
25˚C
125
2
2
(Case
Temp
5A
)
3A
I C= 1 A
0.
5 Base-Emittor Voltage V B E (V)
1.
0 1.
1
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
(V C E =4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 300
1 2 5 ˚C
(V C E =4V)
θ j- a (˚ C/W)
Transient Thermal Resistance
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
5
Typ
100
100
25˚
C
–30
50
˚C
50
1
0.
5 0.
4 1 10 100 Time t(ms) 1000 2000
20 0.
02
0.
1
0.
5
1
5
7
20 0.
...
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