Dual N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics
Description
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S T G 8206
S amHop Microelectronics C orp.
Dec,27.
2004 ver1.
2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 4.
5V 30 @ V G S = 2.
5V
R ugged and reliable.
S urface Mount P ackage.
D2
8
S2
7
S2
6
G2
5
T S S OP
1
(T OP V IE W)
1 2 3 4
D1
S1
S1
G1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 6 40 2 1.
5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 85 C /W
1
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S T G 8206
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.
5V, ID = 5A V GS =2.
5V, ID = 3A V DS = 5V, ID =5A
Min Typ C Max Unit
20 1 V uA 100 nA 0.
5 0.
8 16 24 15 1290 295 231 1.
5 20 30 V
m ohm m ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance
S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =8V, V GS = 0V f =1.
0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
V DD = 10V, ID = 1A, V GE N = 4.
5V, R L = 10 ohm R GE N = 10 ohm V DS =10V, ID = 5A, V GS =4.
5V
41.
8 10.
3 86.
4 34...
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