Power MOSFETs
Description
N-Channel
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CSD16321Q5
Features
Optimized for 5V gate drive Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant
CICLON NexFET™ Power MOSFETs
Product Summary
VDS 25 14 2.
5 VGS = 3.
0V RDS(on) Vth VGS = 4.
5V VGS = 8.
0V 1.
1 2.
8 2.
1 1.
9 V nC nC m m m V
G S S S
D D D D
S 1 S 2 S 3 G 4 D
8 D 7 D 6 D 5 D
Qg Qgd
QFN 5mm x 6mm Plastic Package
Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM PD TJ, TSTG EAS 1.
2.
Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =66A, L = 0.
1mH, RG = 25Ω
0 2
Parameter
Value
25 +10 / -6 100 31 200 3.
1 -55 to 150 218
Units
V V A A A W °C mJ
RθJA = 39 C/W on 1in Cu (2 oz.
) on 0.
060” thick FR4 PCB.
See Figure 10
RDS(ON) vs.
VGS
6 ID = 25A RDS(on) - On Resistance (m ) 5
Gate Charge
10 9 8
TC = 125ºC TC = 25ºC
V DS = 12.
5V ID = 25A
Gate Voltage (V)
10
4 3 2 1 0 0 1 2 3 V GS 4 5 6 7 - Gate to Source Voltage (V)
7 6 5 4 3 2 1 0
8
9
0
5
10
15 20 Qg - Gate Charge (nC)
25
30
35
Ordering Information
Type
CSD16321Q5
Package
QFN 5X6 Plastic Package
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
© 2008 CICLON Semiconductor Device Corp.
, rev 2.
0 All rights reserved.
Confidential and proprietary information.
Do not distribute.
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CSD16321Q5
Symbol
BVDSS IDSS IGSS VGS(th)
CICLON NexFET™ Power MOSFETs
Electrical Characteristics (TA = 25OC unless otherwise stated)
Parameter
Drain to Source Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate to Source Threshold Voltage
Test Conditions
VGS = 0V, ID = 250µA VGS = 0V, VDS = 20V VDS = 0V, VGS = 10V VDS = VGS, ID = 250µA VGS = 3.
0V, ID = 25A
Min
25 ▬ ▬ 0.
9 ▬ ▬ ▬ ▬
Typ
▬ ▬ ▬ 1.
1 2.
8 2.
1 1.
9 150
...
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