RF POWER TRANSISTORS Ldmos Enhanced Technology
Description
LET8180
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 220 W with 17 dB TYP. gain @ 860 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROTECTION
ORDER CODE LET8180 M252 epoxy sealed BRANDING LET8180
DESCRIPTION Th...
Similar Datasheet