(LBC817-xxLT1) General Purpose Transistors NPN Silicon
Description
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
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datasheet4u.
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NPN Silicon
FEATURE
ƽCollector current capability IC = 500 mA.
ƽCollector-emitter voltage VCEO(max) = 45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽPb-Free Package is available.
LBC817-16LT1 LBC817-25LT1 LBC817-40LT1
3
1 2
DEVICE MARKING AND ORDERING INFORMATION
Device LBC817-16LT1 LBC817-16LT1G LBC817-25LT1 LBC817-25LT1G LBC817-40LT1 LBC817-40LT1G Marking 6A 6A (Pb-Free) 6B 6B (Pb-Free) 6C 6C (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
1 BASE 2 EMITTER 3 COLLECTOR
SOT–23
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value 45 50 5.
0 500 Unit V V V mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
Symbol PD 225 1.
8 556 300 2.
4 417 –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit
R θJA PD
R θJA T J , T stg
LBC817_S-1/3
LESHAN RADIO COMPANY, LTD.
LBC817 Series
www.
datasheet4u.
com
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.
)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C= –10 mA) Collector–Emitter Breakdown Voltage (V EB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage ( I E = –1.
0 µA) Collector Cutoff Current ( VCB = 20 V) ( VCB = 20 V, TA = 150°C) V(BR)EBO I CBO — — — — 100 5.
0 nA µA 5.
0 — — V V (BR)CES 50 — — V V(BR)CEO 45 — — V
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (I C...
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