IGBT Power Module
Description
APTGT300DA170
Boost chopper Trench + Field Stop IGBT® www.
datasheet4u.
com Power Module
VBUS
VCES = 1700V IC = 300A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile
CR1
OUT
Q2 G2
E2 0/VBUS
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
600A @ 1600V
These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com
1-5
APTGT300DA170 – Rev 0
May, 2005
Max ratings 1700 400 300 600 ±20 1660
Unit V A V W
APTGT300DA170
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic
CES
Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V
Min
Typ 2.
0 2.
4 5.
8
Max 750 2.
4 6.
5 600
Unit µA V V nA
www.
datasheet4u.
com I Zero
Gate Voltage Collector Current
VCE(sat) VGE(th) IGES
Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
5.
0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input ...
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