MOSFET
Description
SMD Type
MOS Field Effect Transistor
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IC MOSFET
2SJ598
TO-252
+0.
15 1.
50-0.
15
Features
Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX.
(VGS =-10 V, ID = -6 A) MAX.
(VGS = -4.
0 V, ID =-6 A)
+0.
2 9.
70-0.
2
+0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2
Unit: mm
+0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
Built-in gate protection diode
+0.
1 0.
80-0.
1
+0.
15 0.
50-0.
15
0.
127 max
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
+0.
15 5.
55-0.
15
1 Gate 2 Drain 3 Source
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 12 30 23 150 -55 to +150 Unit V V A A W
3.
80
Low Ciss: Ciss = 720 pF TYP.
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1
SMD Type
2SJ598
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MOSFET IC
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 16V,VDS=0 -1.
5 5 -2.
0 11 102 131 720 VDS=-10V,VGS=0,f=1MHZ 150 50 70 VGS(on)=-10V,ID=--6A ,VDD=-30V,RG=0 4 35 10 ID = -12 A VDD= -48 V VGS =-10 V IF = 12 A, VGS = 0 V IF = 12 A, VGS = 0 V di/dt = 100 A / s 15 3 4 0.
98 50 100 130 190 Min Typ Max -10 10 -2.
5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDS=-10V,ID=-6A VGS=-10V,ID=-6A VGS=-4.
0V,ID=-6A
2
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