1MEG (131072 words x 8 bits) Flash Memory
Description
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation.
CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use.
A 128-byte page rewrite function provides rapid data rewriting.
Package Dimensions
unit: mm 3205-SOP32
[LE28C1001M]
Features
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum) • Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years • Address and data latches • Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) • Automatic rewriting using internally generated Vpp • Rewrite complete detection function — Toggle bit — Data polling • Hardware and software data protection functions • All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package SOP 32-pin (525 mil) plastic package : LE28C1001M TSOP 32-pin (8 × 20 mm)plastic package : LE28C1001T
SANYO: SOP32
unit: mm 3224-TSOP32
[LE28C1001T]
SANYO: TSOP32 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
D3096HA (OT)/N3095HA (OT) No.
5129-1/14
LE28C1001M, T-90/12/15 Block Diagram
Pin Assignments
A05759
A05760
Pin Functions
Symbol A16 to A0 Address input Pin Function Supply the memory address to these pins.
The address is latched internally during a write cycle.
These pins outpu...
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