SILICON POWER TRANSISTOR
Description
SavantIC Semiconductor
www.
DataSheet4U.
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Product Specification
Silicon NPN Power Transistors
2SC3892
DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.
1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1400 600 5 7 14 3.
5 50 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40A Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1.
2A IC=5A ;IB=1.
2A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.
1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A 66 8 1 MIN 5
2SC3892
SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB VF ts tf
TYP.
MAX
UNIT V
5.
0 1.
5 10 200 12 3 210 2.
0 2.
5 0.
2
V V µA mA
MHz pF V µs µs
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3892
Fig.
2 Outline dimensions (unindicated tolerance:±0.
15 mm)
3
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