AP70T03GH
Description
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AP70T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S
BVDSS RDS(ON) ID
30V 9mΩ 60A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP70T03GJ) are available for low-profile applications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 ±20 60 43 195 53 0.
36 -55 to 175 -55 to 175
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
8 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200823053-1/4
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
30 1 -
Typ.
0.
03 35 17 5 10 13.
5 8 105 22 9 245 170
Max.
Units 9 18 3 1 250 ±100 27 22 V V/℃ mΩ mΩ V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A VGS=4.
5V, ID=20A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage
Drain-Source Leakage Current (T j=25 C) Dra...
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