SILICON POWER TRANSISTOR
Description
SavantIC Semiconductor
www.
DataSheet4U.
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Product Specification
Silicon PNP Power Transistors
2SB1567
DESCRIPTION ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain.
·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.
1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -2 -3 20 W UNIT V V V A A
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB1567
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA; IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-100
V
VCEsat
Collector-emitter saturation voltage
IC=-1A ; IB=-1mA
-1.
5
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-7V;IC=0
-3.
0
mA
hFE
DC current gain
IC=-1A ; VCE=-2V
1000
10000
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
35
pF
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1567
Fig.
2 Outline dimensions
3
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