Power MOSFET
Description
PD - 95708D
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IRFB3207PbF IRFS3207PbF IRFSL3207PbF
HEXFET® Power MOSFET
D
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
S
VDSS RDS(on) typ.
max.
ID
75V 3.
6m: 4.
5m: 170A
S D G
TO-220AB IRFB3207PbF
S D G
D2Pak IRFS3207PbF
S D G
TO-262 IRFSL3207PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
d
120
170 720 300 2.
0 ± 20 5.
8 -55 to + 175 300 10lb in (1.
1N m)
Max.
Units
A
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw
W W/°C V V/ns °C
f
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current
Ã
e
910 See Fig.
14, 15, 16a, 16b,
mJ A mJ
Repetitive Avalanche Energy
g
Thermal Resistance
Symbol
RθJC RθCS RθJA RθJA Junction-to-Case
k
Parameter
Typ.
––– 0.
50 ––– –––
Max.
0.
50 ––– 62 40
Units
°C/W
Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220
k
Junction-to-Ambient (PCB Mount) , D2Pak
jk
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1
03/06/06
IRF/B/S/SL3207PbF
www.
DataSheet4U.
com Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance
Min...
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