SILICON POWER TRANSISTOR
Description
SavantIC Semiconductor
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DataSheet4U.
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Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD1840 ·Low collector saturation voltage APPLICATIONS ·Motor drivers,relay drivers,converters and other general high-current switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SB1230
Fig.
1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -15 -25 -5 3.
0 W UNIT V V V A A A
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-5mA;RBE=< IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-6A; IB=-0.
6A IC=-6A; IB=-0.
6A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.
5A ; VCE=-2V IC=-6A ; VCE=-2V 50 20 MIN -100 -110 -6
2SB1230
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V V
-0.
8 -1.
5 -100 -100 140
V V µA µA
hFE-1 Classifications P 50-100 Q 70-140
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1230
Fig.
2 outline dimensions
3
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