SILICON POWER TRANSISTOR
Description
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB1085
DESCRIPTION ·With TO-220 package ·Complement to type 2SD1562 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.
1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -1.
5 -3.
0 20 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
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DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IC=-50µA ,IE=0 IE=-50µA ,IC=0 IC=-1A; IB=-0.
1A IC=-1A; IB=-0.
1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.
1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.
1A ; VCE=-5V 60 MIN -120 -120 -5
2SB1085
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V V
-2.
0 -1.
5 -1.
0 -1.
0 320 30 50
V V µA µA
pF MHz
hFE classifications D 60-120 E 100-200 F 160-320
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1085
Fig.
2 Outline dimensions(unindicated tolerance:±0.
10 mm)
3
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