Silicon N Channel Power MOS FET Power Switching
Description
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RJK0331DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1640-0400 Rev.
4.
00 Apr 10, 2008
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.
6 mΩ typ.
(at VGS = 10 V) • Pb-free • • • • •
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D
5
4 G
3 12 4
1, 2, 3 4 5
Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch θch-C Tch Tstg
Note3
Ratings 30 ±20 40 160 40 20 40 50 2.
5 150 –55 to +150
Unit V V A A A A mJ W °C/W °C °C
REJ03G1640-0400 Rev.
4.
00 Apr 10, 2008 Page 1 of 6
RJK0331DPB
Electrical Characteristics
(Ta = 25°C)
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DataSheet4U.
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Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Qrr
Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Body–drain diode reverse recovery charge Notes: 4.
Pulse test
Min 30 — — 1.
2 — — — — — — — — — — — — — — — — —
Typ — — — — 2.
6 3.
5 80 3380 660 190 0.
6 22 7.
8 4.
8 5.
8 3.
9 45 4.
6 0.
82 30 26
Max — ±0.
1 1 2.
5 3.
4 4.
9 — — — — — — — — — — — — 1.
07 — —
Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V n...
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