Power Management Switch Application
Description
HN7G02FU
TOSHIBA Multi Chip Discrete Device
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HN7G02FU
Unit: mm
Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA Weight: g (typ.
)
― ― ―
Q1, Q2 Common Ratings (Ta = 25°C) Marking
Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 150 −55~150 Unit mW °C °C
FT
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum Equivalent ratings.
Please design the appropriate reliability upon reviewing the Toshiba 6 5 Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Q1
Circuit (top view)
4
Q2
Note 1: Total rating
1
2
3
1
2007-11-01
HN7G02FU
Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
www.
DataSheet4U.
com Characteristics
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 mA IC = 5 mA, IB = −0.
25 mA ⎯ Min ⎯ ⎯ 120 ⎯ 3.
29 Typ.
⎯ ⎯ ⎯ −0...
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