EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1 B
C
KRC231S~KRC235S
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.
93+_ 0.
20
B 1.
30+0.
20/-0.
15
A G H
D
23
C 1.
30 MAX D 0.
40+0.
15/-0.
05
E 2.
40+0.
30/-0.
20 1 G 1.
90
H 0.
95
J 0.
13+0.
10/-0.
05
K 0.
00 ~ 0.
10 Q
PP
L 0.
55
M 0.
20 MIN
N 1.
00+0.
20/-0.
10
C N K J
P7
Q 0.
1 MAX
M
1.
EMITTER 2.
BASE 3.
COLLECTOR
E SOT-23
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
MARK SPEC
TYPE KRC231S
MARK
NW
KRC232S NY
KRC233S NZ
KRC234S NNA
KRC235S NNB
Marking
Type Name
Lot No.
Type Name
Lot No.
RATING 30 15 5 600 200 150
-55 150
UNIT V V V mA mW
2011.
6.
29
Revision No : 6
1/3
KRC231S~KRC235S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain
KRC231S
BVCEO BVCBO BVEBO
ICBO VCE(sat)
hFE
KRC232S
Input Resistor
KRC233S KRC234S
R1
KRC235S
Transition Frequency
fT*
On Resistance Note : * Characteristic of Transistor Only.
Ron
TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=30V IC=50mA, IB=2.
5mA VCE=5V, IC=50mA
VCE=10V, IE=-50mA, f=100MHz f=1kHz, IB=1mA, VIN=0.
3V
MIN.
15 30 5.
0 200 1.
54 3.
92 7 3.
29 4.
76
TYP.
MAX.
UNIT - -V - -V - -V - 0.
5 A 40 80 mV
350 800 2.
2 2.
86 5.
6 7.
28 10 13 k 4.
7 6.
11 6.
8 8.
84
- 200 - MHz
- 0.
6 -
2011.
6.
29
Revision No : 6
2/3
DC CURRENT GAIN h FE
KRC231S~KRC235S
h FE - I C
2k 1k
300
100
30
10 COMMON EMITTER
3 VCE =5V Ta=25 C
1 0.
1 0.
3 1
3
10
30 100 300 1k
COLLE...
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