2SC4883
Description
2SC4883/4883A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) sAbsolute maximum ratings (Ta=25°C)
Symbol 2SC4883 2SC4883A VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 6 2 1 20(Tc=25°C) 150 –55 to +150 180 180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.
7A IC=0.
7A, IB=70mA VCE=12V, IE=–0.
7A VCB=10V, f=1MHz
Application : Audio Output Driver and TV Velocity-modulation
(Ta=25°C) 2SC4883 2SC4883A Unit
sElectrical Characteristics
Symbol ICBO VCB= 150 10max 150min Conditions
External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
10max 180 180min
µA µA
V V MHz pF
13.
0min 16.
9±0.
3 8.
4±0.
2
V
60 to 240 1.
0max 120typ 30typ
1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2
www.
DataSheet4U.
com sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 100 IB2 (mA) –100 ton (µs) 0.
5typ tstg (µs) 1.
5typ tf (µs) 0.
5typ
2.
54
3.
9 B C E
I C – V CE Characteristics (Typical)
2
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
2 (V CE =4V)
100mA
60mA
30m A
15m
A
Collector Current I C (A)
10m
A
2
Collector Current I C (A)
1
1
)
Temp) –55˚C (Case
eT
Cas
1
˚C (
I C =2A 0.
5A 0 2 5 10 50 1A 100 500 1000 0 0
0
0
2
4
6
8
10
0.
5 Base-Emittor Voltage V B E (V)
25˚C
125
(Cas
e Te
mp)
I B =5mA
emp
±0.
2
0.
8±0.
2
a b
ø3.
3±0.
2
Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
1.
0
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
h FE – I C Characteristics (Typical)
(V C E =4V) 300 DC Curr ent Gain h FE
h FE – I C Temperature Characteristics (Typical)
(V C E =4V) 300 DC Curr ent Gain h FE 125˚C 25˚C 100
θ j- a ( ˚ C/W)
Transient Thermal Resistance
θ j-a – t Characteristics
7 5
Typ
100
–55˚C
50 30 0.
01
50 40 0.
01 0.
05 0.
1 0.
5 1 2 0.
05 0.
1 0.
5 1 2
1
1
10
100 Time t(ms)
1000 2000
Collector Cur...
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