Power MOSFET
Description
www.
vishay.
com
IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
14 2.
7 7.
8 Single
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
1.
1
GS
GD S
S N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
DESCRIPTION
Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a.
See device orientation.
DPAK (TO-252) SiHFR224-GE3 IRFR224PbF SiHFR224-E3
DPAK (TO-252) SiHFR224TR-GE3 IRFR224TRPbFa SiHFR224T-E3a
DPAK (TO-252) SiHFR224TRL-GE3 IRFR224TRLPbFa SiHFR224TL-E3a
IPAK (TO-251) SiHFU224-GE3 IRFU224PbF SiHFU224-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
...
Similar Datasheet
