Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
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SSH9N80A
BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A
TO-3P
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.)
1 2 3
1.Gate 2. Drain 3. Source
Absolute...
Fairchild Semiconductor
SSH9N80A PDF File
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