IRG4PH50UD
Description
PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode www.
DataSheet4U.
com • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package
C
UltraFast CoPack IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
78V
@VGE = 15V, IC = 24A
n-cha nn el
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's .
Minimized recovery characteristics require less/no snubbing
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 45 24 180 180 16 180 ± 20 200 78 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case ) 10 lbf•in (1.
1N•m)
Units
V A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
––– ––– ––– ––– –––
Typ.
––– ––– 0.
24 ––– 6 (0.
21)
Max.
0.
64 0.
83 ––– 40 –––
Units
°C/W
g (oz)
www.
irf.
com
1
7/7/2000
IRG4PH50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on) www.
DataSheet4U.
com VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IG...
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