N-CHANNEL POWER MOSFET
Description
®
STP80NF55-06 STP80NF55-06FP
N - CHANNEL 55V - 0.
005Ω - 80A TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP80NF55-06 STP80NF55-06FP
s s s s
V DSS 55 V 55 V
R DS(on) < 0.
0065 Ω < 0.
0065 Ω
ID 80 A 60 A
TYPICAL RDS(on) = 0.
005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
3 1 2
3 1 2
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP80NF55-06 V DS V DGR V GS ID ID I DM ( • ) P tot V ISO dv/dt Ts tg Tj July 1999 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature
o
Unit
STP55NF 55-06FP 55 55 ± 20 V V V 60 42 240 50 0.
33 2000 7 A A A W W/ oC V V/ns
o o
80 57 320 210 1.
43 -65 to 175 175
C C 1/6
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STP80NF55-06/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.
7 62.
5 0.
5 300 TO-220FP 3
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse wid...
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