N - CHANNEL POWER MOSFET
Description
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.
013Ω-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET
TYPE STB80NF12 STP80NF12 STP80NF12FP STW80NF12
s s s s
VDSS 120 V 120 V 120 V 120 V
RDS(on) <0.
018 <0.
018 <0.
018 <0.
018 Ω Ω Ω Ω 80 80 80 80
ID A(*) A(*) A(*) A(*)
TO-220
TO-220FP
3 1 2
1 2
3
s
TYPICAL RDS(on) = 0.
013Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
TO-247 D²PAK
TO-263
(Suffix “T4”)
3 1
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature Value STB_P_W80NF12 STP80NF12FP 120 120 ± 20 80 80(#) 60 60(#) 320 320(#) 300 45 2.
0 0.
3 10 700 -----2500 -55 to 175 Unit V V V A A A W W/°C V/ns mJ V °C
(•) Pulse width limited by safe operating area.
(*) Limited by Package (2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(#) Refer to SOA for the max allovable currente values on FP-type due to thermal resistance value.
(1) Starting Tj = 25 oC, ID = 40A, VDD = 45V
March 2...
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