HIGH-POWER GaAlAs IR EMITTERS
Description
HIGH-POWER GaAlAs IR EMITTERS
OD-880W
FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area
GLASS .
006 HIGH MAX .
015
1.
00 MIN.
ANODE (CASE)
.
209 .
220
.
183 .
152 .
187 .
156 .
017 .
098 .
112 .
143 .
150
.
100 .
041
All surfaces are gold plated.
Dimensions are nominal values in inches unless otherwise specified.
Window caps are welded to the case.
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CATHODE
.
036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
Total Power Output, Po Radiant Intensity, Ie PARAMETERS TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 18 TYP 20 16 80 80 30 17 MAX UNITS mW/sr nm nm mW
Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF
880
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
5
1.
55
1.
9
Volts Volts Msec Msec pF
Deg
0.
5 0.
5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A
Peak Forward Current (10Ms, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature
-55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.
com, Website: www.
optodiode.
com
Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
HIGH-POWER GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SI...
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