Silicon Controlled Rectifier
Description
MCR218-6FP , MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts www.
DataSheet4U.
com • 80 A Surge Current Capability • Insulated Package Simplifies Mounting • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.
g.
, MCR218–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MCR218–6FP MCR218–10FP On-State RMS Current (TC = +70°C)(2) (180° Conduction Angles) Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.
3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width Symbol VDRM, VRRM 400 800 IT(RMS) ITSM 8.
0 100 Amps Amps Value Unit Volts
http://onsemi.
com
ISOLATED SCRs ( 8 AMPERES RMS 400 thru 800 VOLTS
)
G A K
1 2 3
I2t
26 5.
0 0.
5 2.
0 1500 –40 to +125 –40 to +150
A2s Watts Watt 1 Amps Volts °C °C
v 1.
0 µs)
PGM PG(AV) IGM V(ISO) TJ Tstg
ISOLATED TO–220 Full Pack CASE 221C STYLE 2
Forward Average Gate Power (TC = +70°C, t = 8.
3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width
PIN ASSIGNMENT
Cathode Anode Gate 2 3
v 1.
0 µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) ( )
p
Operating Junction Temperature Storage Temperature Range
ORDERING INFORMATION
Device MCR218–6FP MCR218–10FP Package ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis.
Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode...
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