Silicon N-Channel MOS FET
Description
2SK1296
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
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Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
2
1 2 3
1
1. Gate 2. Drain (Flange) 3. Source...
Hitachi Semiconductor
2SK1296 PDF File
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