Enhancement Mode Power MOSFET
Description
WTC2306
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
2
SOURCE
Features:
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package
3 1 2
Applications:
* Power Management in Notebook Compute...
Weitron Technology
WTC2306 PDF File
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