VHF-UHF Band Low Noise Amplifier Application
Description
MT6L68FS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L68FS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
1.
0±0.
05 0.
1±0.
05 0.
35 0.
35 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05
Unit: mm
1.
0±0.
05
0.
7±0.
05
• • •
Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free.
1 2 3
6 5 4 0.
1±0.
05
Mounted www.
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Devices
Q1 Q2 MT3S11T (MT3S11FS) MT3S06T (MT3S06FS)
+0.
02 -0.
04
Corresponding three-pin products: TESM(fSM) mold products
0.
48
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg 10 5 1.
5 15 7 100 110 (Note 2) 125 −55~125 °C °C Rating Q2 13 6 1 40 10 V V V mA mA mW Unit
fS6
1.
Collector1 (C1) 2.
Emitter1 (E1) 3.
Collector2 (C2) 4.
Base2 (B2) 5.
Emitter2 (E2) 6.
Base1 (B1)
JEDEC JEIAJ TOSHIBA
― ― 2-1F1A
Weight: 0.
001g (typ.
)
Note 1: 10 mm2 × 1.
0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation.
Marking (top view)
6 5 4
Pin Assignment (top view)
6 5 4
1K
1 2 3
Q1
1 2
Q2
3
1
2005-08-01
MT6L68FS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 5 mA
2
Min
Typ.
Max 0.
1 1 140 0.
5
Unit
⎯ ⎯
70
⎯ ⎯ ⎯
0.
25 10 8.
5 9.
5 1.
7
µA µA ⎯
pF GHz dB dB
⎯
7
⎯ ⎯ ⎯
3
⎪S21e⎪ (1) ⎪S21e⎪2 (2)
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz
⎯
7
⎯
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Electrical Characteristics Q2 (Ta = 25°C)
Characteristic Co...
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