N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
AP30G120W
Pb Free Plating Product
Advanced Power Electronics Corp.
Features
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
VCES ¡¿ ¡¿ ¡¿
¡¿
1200V 30A C
High speed switching Low Saturation Voltage VCE(sat)=3.
0V@IC=30A Industry Standard TO-3P Package
RoHS Compliant
IC
G
G C E TO-3P E
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Absolute Maximum Ratings
Symbol VCES VGE IC@TC=25¢J IC@TC=100¢J ICM PD@TC=25¢J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current
1
Parameter Collector-Emitter Voltage
Rating 1200 ±30 60 30 160 208 -55 to 150 -55 to 150 300
Units V V A A A W ¢J ¢J ¢J
Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes , 1/8" from case for 5 seconds .
Notes:
1.
Repetitive rating : Pulse width limited by max .
junction temperature .
Thermal Data
Symbol Rthj-c Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.
6 40 Units ¢J /W ¢J /W
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVCES IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Collect-to-Emitter Breakdown Voltage Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=0V VCE=30V f=1.
0MHz Test Conditions VGE=0V, IC=250uA VGE=±30V, VCE=0V VCE=1200V, VGE=0V VGE=15V, IC=30A VGE=15V, IC=60A VCE=VGE, IC=1mA IC=30A VCC=500V VGE=15V VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load Min.
1200 3 Typ.
3 3.
8 4.
4 55 12 27 20 20 65 200 1.
8 1.
1 1320 105 9 Max.
±500 1 3.
6 7 88 300 2110 Units V nA mA V V V nC nC nC ns ns ns ns mJ mJ pF pF pF
Data and specifications subject to change with...
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