P-CHANNEL POWER MOSFET - STMicroelectronics
Description
®
STP12PF06
P - CHANNEL 60V - 0.
18 Ω - 12A TO-220 STripFET™ POWER MOSFET
TYPE STP12PF06
s s s s
V DSS 60 V
R DS(o n) < 0.
20 Ω
ID 12 A
www.
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= 0.
18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATIONL
3 1 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( • ) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max.
Operating Junction Temperature
o o
Value 60 60 ± 20 12 8.
4 48 60 0.
4 6 -65 to 175 175
Unit V V V A A A W W /o C V/ns
o o
C C
(•) Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/8
STP12PF06
THERMAL DATA
R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp 2.
5 62.
5 0.
5 275
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbo l IAR
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Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V)
Max Value 12 200
Unit A mJ
E AS
ELECTRI...
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