IGBT MODULE
Description
IGBT MODULE
CIRCUIT
Six Pack 100A 1200V
OUTLINE DRAWING
PTMB100B12
12- fasten- tab No 110
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Dimension(mm)
Approximate Weight : 550g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PTMB100B12
1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 2 1.
4
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.
) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG= 10 ohm VGE= +/- 15V
Min.
4.
0 -
Typ.
1.
9 8300 0.
25 0.
40 0.
25 0.
80
Max.
2.
0 1.
0 2.
4 8.
0 0.
45 0.
70 0.
35 1.
10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 100 200
Unit A Typ.
1.
9 0.
2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=200A/µs
Min.
-
Max.
2.
4 0.
3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.
24 0.
42
PTMB100B12
Fig.
1- Output Characteristics (Typical)
200
Fig.
2- Collector to Emitter On Voltage vs.
Gate to Emitter Voltage (Typical)
TC=25℃
16
TC=25℃ IC=50A 200A
VGE=20V 15V
12V
10V
Collector to Emitter Voltage V CE (V)
14 12 10 8 6 4 2 0
100A
Collector Current I C (A)
150
9V
100
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8V
7V
0 0 2 4 6 8 10
0
4
8...
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