Dual N-Channel MOSFET
Description
SPN6435
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.
0A.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability.
Direct
Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays
FEATURES 40V/0.
30A , RDS(ON)=4.
0Ω@VGS=10V 40V/0.
20A , RDS(ON)=5.
0Ω@VGS=5.
0V 40V/0.
02A , RDS(ON)=10.
0Ω@VGS=2.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-363 package design
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
PART MARKING
2020/04/15 Ver.
4
Page 1
SPN6435
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPN6435S36RGB
SOT-363
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN6435S36RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking 435
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage - Continuous
VGSS
Gate –Source Voltage - Non Repetitive ( tp < 50μs)
VGSS
Continuous Drain Current(TJ=150℃)
TA=25℃
ID
Pulsed Drain Current ()
IDM
Continuous Source Current(Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambi...
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