HiPerFETTM Power MOSFETs
Description
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
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IXFR 21N100Q
VDSS ID25
RDS(on)
= 1000 V = 19 A = 0.
50 W
trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 19 84 21 21 60 2.
3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
Isolated backside* G = Gate S = Source * Patent pending D = Drain
1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1000 2.
5 V 4.
5 V ±100 nA TJ = 125°C 100 mA 2 mA 0.
5 W
Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Rated for Unclamped Inductive Load Switching (UIS) • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density
98723 (05/24/00)
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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IXFR...
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