N-CHANNEL POWER MOSFET
Description
HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: MOS200407 Issued Date : 2004.
10.
01 Revised Date : 2005.
04.
22 Page No.
: 1/4
HIRF830 / HIRF830F
N-CHANNEL POWER MOSFET
HIRF830 Series Pin Assignment
Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Description
This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
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2
3
1
Features
• Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
1
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3
2
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value TO-220AB TO-220FP 62 1.
71 3.
3 Units °C/W °C/W
HIRF830 Series Symbol D G S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous) Drain to Current (Pulsed) (*1) Gate-to-Source Voltage (Continue) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy (*2) Avalanche Current (*1) Repetitive Avalanche Energy (*1) Peak Diode Recovery (*3) Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Parameter Value 500 4.
5 18 ±20 74 38 0.
59 0.
3 250 9 7.
4 5 -55 to 150 -55 to 150 300 Units V A A V W
PD
W/°C mJ A mJ V/ns °C °C °C
EAS IAR EAR dv/dt Tj Tstg TL
*1: Repetitive rating; pulse width limited by max.
junction temperature *2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.
5A *3: ISD≤4.
5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C HIRF830, HIRF830F HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol V(BR)DSS IDSS IGSSF
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DataSheet4U.
com
Spec.
No.
: MOS200407 Issued Date : 2004.
10.
0...
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