TRANSISTOR
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92 Plastic-Encapsulate Transistors
8050S
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissipation PCM : 0.
625 W£¨ Tamb=25¡æ£© www.
DataSheet4U.
com Collector current ICM : 0.
5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.
EMITTER
2.
COLLECTOR
3.
BASE
1 2 3
unless
Test
otherwise
MIN 40 25 5
specified£©
TYP MAX UNIT V V V 0.
1 0.
1 0.
1 ¦Ì A ¦Ì A ¦Ì A
conditions
Ic= 100¦Ì A , IE=0 Ic= 1 mA£¬ IB=0 IE= 100¦Ì A£¬ IC=0 VCB= 40 V , VCE= 20 V , IE=0 IB=0
VEB= 3 V £¬ IC=0 VCE= 1 V, IC= 50m A VCE= 1 V, IC= 500m A IC=500mA, IB=50 mA IC=500mA, IB=50 mA VCE= 6 V, IC=20mA 85 50
300
0.
6 1.
2
V V
Transition frequency
fT f =30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank Range B 85-160 C 120-200 D 160-300
...
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