2SC3940A
Description
Transistors
2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplification Complementary to 2SA1534, 2SA1534A
5.
0±0.
2
Unit: mm
4.
0±0.
2
8.
0±0.
2
■ Features
0.
7±0.
1
0.
7±0.
2 13.
5±0.
5
• Low collector-emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage 2SC3940 VCBO
30
V
0.
45+–00.
.
12
0.
45+–00.
.
115
e (Emitter open)
2SC3940A
60
c type) Collector-emitter voltage 2SC3940 VCEO
25
2.
3±0.
2
V
n d ge.
ed (Base open)
2SC3940A
50
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
1
A
life d, d Peak collector current
ICP
1.
5
A
n u duct type Collector power dissipation
PC
1
W
te tin Pro ued Junction temperature
Tj
150
°C
four ontin Storage temperature
Tstg −55 to +150 °C
in n followinnged disc ■ Electrical Characteristics Ta = 25°C ± 3°C
des , pla Parameter
Symbol
Conditions
a o inclu type Collector-base voltage c ued nce (Emitter open)
2SC3940 VCBO 2SC3940A
IC = 10 µA, IE = 0
M is ntin tena Collector-emitter voltage
isco ain (Base open)
2SC3940 VCEO 2SC3940A
IC = 2 mA, IB = 0
ce/D pe, m Emitter-base voltage (Collector open)
D nan e ty Collector-base cutoff current (Emitter open)
ainte nanc Forward current transfer ratio *1 Mmainte Collector-emitter saturation voltage*1 (planed Base-emitter saturation voltage*1
VEBO ICBO hFE1 *2 hFE2 VCE(sat) VBE(sat)
IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA
(1.
27)
(1.
27)
123
1: Emitter 2: Collector
2.
54±0.
15
3: Base
TO-92NL-A1 Package
Min Typ Max Unit
30
V
60
25
V
50
5
V
0.
1
µA
85
340
50
0.
2 0.
4
V
0.
85 1.
20
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
11 20
pF
(Common ...
Similar Datasheet
