IGBT Modules
Description
European PowerSemiconductor and Electronics Company
www.
DataSheet4U.
com
Marketing Information FZ 800 R 16 KF4
18 screwing depth max.
8 61,5 M8
31,5
130 114
C
C
E E C G
E
M4 28
7
16,5
2,5 18,5
external connection (to be done)
C C
C
G E E E
external connection (to be done)
VWK Apr.
1997
IGBT-Module
Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw.
current insulation test voltage tp=1ms RMS, f=50 Hz, t= 1 min.
tp=1 ms tC=25°C, Transistor /transistor VCES IC ICRM Ptot VGE IF IFRM VISOL
FZ 800 R 16 KF4
1600 V 800 A 1600 A 6250 W ± 20 V 800 A 1600 A 3,4 kV min.
typ.
3,3 4,4 5,5 130 6 60 0,8 1 1,1 1,3 0,25 0,3 max.
3,7 V 4,8 V 6,5 V - nF - mA - mA 400 nA 400 nA - µs - µs - µs - µs - µs - µs
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=800A, v GE=15V, t vj=25°C iC=800A, v GE=15V, t vj=125°C iC=65mA, v CE=vGE, tvj=25°C fO=1MHz,t vj=25°C,v CE=25V, v GE=0V vCE=1600V, v GE=0V, t vj=25°C vCE=1600V, v GE=0V, t vj=125°C vCE=0V, v GE=20V, t vj=25°C vCE=0V, v EG=20V, t vj=25°C iC=800A,v CE=900V,v L=±15V vL=±15V, R G=2,4Ω, tvj=25°C vL=±15V, R G=2,4Ω, tvj=125°C Speicherzeit (induktive Last) storage time (inductive load) iC=800A,v CE=900V,v L=±15V vL=±15V, R G=2,4Ω, tvj=25°C vL=±15V, R G=2,4Ω, tvj=125°C Fallzeit (induktive Last) fall time (ind...
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