SM2LZ47
Description
SM2LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 800V l R.
M.
S.
On−State Current l High Commutation (dv / dt) l Isolation Voltage
www.
DataSheet4U.
com
Unit: mm
: IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.
) : VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage R.
M.
S.
On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.
)
2
SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL
2
RATING 800 2 8 (50Hz) 8.
8 (60Hz) 0.
32 50 3 0.
3 10 1.
6 −40~125 −40~125 1500
UNIT V A A A s A / µs W W V A °C °C V
2
JEDEC JEITA TOSHIBA Weight: 1.
7g
― ― 13−10H1A
Note:
di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.
0
1
2001-07-10
SM2LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.
DataSheet4U.
com Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Communication VTM VGD IH Rth (j−a) dv / dt (dv / dt) c ITM = 3A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Ambient, AC VDRM = 800V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = − 0.
5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = 800V T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) MIN ― ― ― ― ― ― ― ― 0.
2 ― ― ― 5 TYP.
― ― ― ― ― ― ― ― ― ― ― 500 ― MAX 20 1.
5 1.
5 1.
5 10 10 10 2.
0 ― 10 58 ― ― V V mA °C / W V / µs V / µs mA V UNIT µA
...
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